Search results for "Vapour Phase Epitaxial Growth"

showing 4 items of 4 documents

Effect of reactive ion beam etching on the photoluminescence of CdTe epitaxial layers

2008

http://link.aip.org/link/?JAPIAU/103/056108/1

Materials sciencePhotoluminescenceSapphireSpectral line intensityCadmium compoundsIon platingAnalytical chemistryUNESCO::FÍSICASemiconductor epitaxial layersGeneral Physics and AstronomyII-VI semiconductorsEpitaxyAcceptorVapour phase epitaxial growthEtchingEtching (microfabrication):FÍSICA [UNESCO]Ion beam assisted depositionMOCVDSapphireCadmium compounds ; Etching ; II-VI semiconductors ; Impurities ; Ion beam assisted deposition ; MOCVD ; Photoluminescence ; Sapphire ; Semiconductor epitaxial layers ; Spectral line intensity ; Vapour phase epitaxial growthMetalorganic vapour phase epitaxyIon beam-assisted depositionPhotoluminescenceImpurities
researchProduct

Faceting and structural anisotropy of nanopatterned CdO(110) layers

2005

CdO(110) layers with a self-organized surface structure have been grown on (10math0) sapphire (m plane) substrates by metal-organic vapor phase epitaxy. The epitaxial relationships between layer and substrate have been determined and a crystallographic model that accounts for the CdO in-plane orientation, which results in a reduced lattice mismatch when the CdO[001] direction is perpendicular to the sapphire c axis, has been proposed. Although the measured lattice parameters indicate that the layers are almost fully relaxed, an anisotropic mosaicity is detected with symmetrical rocking curves attaining minimum values when measured along the CdO[math10] direction. The layer morphology consis…

Materials scienceGeneral Physics and AstronomySemiconductor growthEpitaxyMosaicityVapour phase epitaxial growthCadmium compound ; Semiconductor epitaxial layers ; II-VI semiconductors ; Semiconductor growth ; Vapour phase epitaxial growth ; MOCVD ; Nanopatterning ; Self-assembly ; Lattice constants ; Mosaic structure ; Surface morphologyLattice constant:FÍSICA [UNESCO]PerpendicularMetalorganic vapour phase epitaxyAnisotropyCondensed matter physicsUNESCO::FÍSICASemiconductor epitaxial layersLattice constantsNanopatterningII-VI semiconductorsSelf-assemblyFacetingCrystallographyCadmium compoundMOCVDSapphireSurface morphologyMosaic structure
researchProduct

Structural characterization of a-plane Zn1−xCdxO (0 < x <0.085) thin films grown by metal-organic vapor phase epitaxy.

2006

Zn1−xCdxO(11math0) films have been grown on (01math2) sapphire (r–plane) substrates by metal-organic vapor phase epitaxy. A 800-nm-thick ZnO buffer, deposited prior to the alloy growth, helps to prevent the formation of pure CdO. A maximum uniform Cd incorporation of 8.5 at. % has been determined by Rutherford backscattering spectrometry. Higher Cd contents lead to the coexistence of Zn1−xCdxO alloys of different compositions within the same film. The near band-edge photoluminescence emission shifts gradually to lower energies as Cd is incorporated and reaches 2.93 eV for the highest Cd concentration (8.5 at. %). The lattice deformation, due to Cd incorporation, has been described using a n…

PhotoluminescenceMaterials scienceRutherford backscatteringCadmium compoundsUNESCO::FÍSICAAnalytical chemistrySemiconductor epitaxial layersGeneral Physics and AstronomyII-VI semiconductorsSurface structureChemical vapor depositionRutherford backscattering spectrometryEpitaxyVapour phase epitaxial growthCrystallographyLattice constantZinc compounds ; Cadmium compounds ; II-VI semiconductors ; MOCVD ; Vapour phase epitaxial growth ; Semiconductor epitaxial layers ; Rutherford backscattering ; Photoluminescence ; Surface structure ; Buffer layers:FÍSICA [UNESCO]MOCVDSapphireBuffer layersMetalorganic vapour phase epitaxyZinc compoundsThin filmPhotoluminescence
researchProduct

Structural defects in Hg1−xCdxI2 layers grown on CdTe substrates by vapor phase epitaxy

1997

Hg1−xCdxI2 20–25-μm-thick layers with a uniform composition in the range of x = 0.1–0.2 were grown on CdTe substrates by vapor phase epitaxy (VPE). The growth was carried out using an α-HgI2 polycrystalline source at 200 °C and in the time range of 30–100 h. The layers were studied by scanning electron microscopy (SEM) and high resolution synchrotron x-ray topography (SXRT). The SEM and SXRT images of Hg1−xCdxI2 VPE layers allow one to identify the defects affecting the layer structure. The two main types of structural defects in the layers are subgrain boundaries and densely spaced striations similar to those referred generally to as vapor grown HgI2 bulk crystals. The effect of the growth…

Materials scienceSemiconductor MaterialsGrain BoundariesScanning electron microscopeVapor phaseGeneral Physics and AstronomyMercury Compounds ; Cadmium Compounds ; Semiconductor Materials ; Vapour Phase Epitaxial Growth ; Semiconductor Growth ; Semiconductor Epitaxial Layers ; Scanning Electron Microscopy ; X-Ray Topography ; Grain BoundariesEpitaxylaw.inventionlaw:FÍSICA [UNESCO]Cadmium CompoundsSemiconductor Epitaxial Layersbusiness.industryMercury CompoundsX-Ray TopographyUNESCO::FÍSICASynchrotronCadmium telluride photovoltaicsCrystallographySemiconductor GrowthOptoelectronicsVapour Phase Epitaxial GrowthGrain boundaryCrystalliteScanning Electron MicroscopybusinessLayer (electronics)
researchProduct